Roughening during XeF2 etching of Si(100) through interface layers: H:Si(100) and a-Si∕Si(100)
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چکیده
منابع مشابه
Interface roughening and pinning
We study a simple model for the pmning of an interface by impunties with random strengths, and the depinning due to the applied pressure, m a quasi-static propagation
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2009
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.3085718